【論文/Paper】 冨岡准教授のInGaAs/InP CSナノワイヤ/Si トンネルFETに関する論文がApplied Physics Lettersに掲載されました。Prof. Tomioka' paper regarding VGAA-TFET using InGaAs/InP CS nanowire/Si junction was published in APL. InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistorsAppl. Phys. Lett., 117 (2020) pp.123501 - 1~5
Prof. Tomioka' paper regarding VGAA-TFET using InGaAs/InP CS nanowire/Si junction was published in APL. InGaAs-InP core-shell nanowire/Si junction for vertical tunnel field-effect transistorsAppl. Phys. Lett., 117 (2020) pp.123501 - 1~5
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