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​国際会議 / International Conference

招待講演（計76件, 内筆頭40件、共著36件）

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  1. J. Motohisa, K. Tomioka, S. Hara, K. Hiruma, T. Fukui: “Position Controlled Growth and Optical Properties of III-V Semiconductor Core-Shell Nanowires Grown by Selective-Area MOVPE and Their Device Applications”, SPIE Photonics West Conferences. San Jose, USA, January (2009).

  2. T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa: “III-V Semiconductor Nanowires and Their Device Application”, 2009 RCIQE seminar on Advanced Semiconductor Materials and Devices”, Sapporo, March (2009).

  3. T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa: “Position Controlled Growth of III-V Core-Shell Nanowire Grown by Selective-Area MOVPE and Their Device Applications”, 2009 MRS spring meeting, San Francisco, USA, April (2009).

  4. T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa: “III-V Semiconductor Nanowires Grown and Their Device Applications”, the 13th Europiean Workshop on Metal-Organic Vapour Phase Epitaxy (EWMOVPE-XIII), Ulm, Germany, June (2009).

  5. T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa: “III-V Semiconductor Nanowires: from Growth to Device Applications”, the 22nd International Microprocesses and Nanotechnology Conference (MNC 2009), Sapporo, November (2009).

  6. S. Hara, J. Motohisa, K. Tomioka, K. Hiruma, T. Fukui: “Catalyst-free and position-controlled formation of III-V semiconductor nanowires for optical device application”, the OPTO Symposia, the SPIE Photonic West Conferences 2010, San Francisco, USA, January (2010).

  7. T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa: “III-V Semiconductor Core-Shell Nanowires Grown by Selective-Area MOVPE and Their Device Applications”, 2010 MRS spring meeting, San Francisco, USA, April (2010).

  8. T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa: “III-V Semiconductor Nanowires from Crystal Growth to Device Applications”, the 15th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XV), Nevada, USA, May (2010).

  9. T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa: “III-V Semiconductor Core-Shell Nanowires Grown by Selective-Area MOVPE and Their Device Applications”, the 29th Electronic Materials Symposium (EMS-29), Izu, Japan, July (2010).

  10. Katsuhiro Tomioka, Junichi Motohisa, Shijiroh Hara, Kenji Hiruma, and Takashi Fukui, "Fabrication of GaAs/AlGaAs core-multishell nanowire-based light-emitting diode array on Si substrate", SPIE Optics+Photonics 2010, San Diego, USA, August (2010).

  11. J. Motohisa, K. Tomioka, S. Hara, K. Hiruma, T. Fukui: “Growth Mechanism of III-V Semiconductor Nanowires in Selective-Area Metal-Organic Vapor Phase Epitaxy” the 16th International Conference on Crystal Growth (ICCG-16), Beijin, China, August (2010).

  12. K. Hiruma, K. Tomioka, S. Hara, J. Motohisa, T. Fukui: “III-V Semiconductor nanowire Formation Using Catalyst Free MOVPE and Applications to Optoelectronics Devices”, the 12th Nanowire Research Society Meeting and Nano Korea 2010 Satellite Session, “Integrated Nanowire Systems”, Goyang, Korea, August (2010).

  13. T. Fukui, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa: “Fabrication of III-V Semiconductor Core-Shell Nanowires by SA-MOVPE and Their Applications”, the 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2010), Canbera, December (2010).

  14. K. Hiruma, S. Fujisawa, K. Ikejiri, K. Tomioka, S. Hara, J. Motohisa, T. Fukui: “GaAs and Related III-V nanowires Formed by Using Selective-Area Metal Organic Vapor Phase Epitaxy and Their Applications to Optoelectronics”, the 473rd Wilhelm and Else Heraeus Seminar on III-V nanowires – Growth, Properties and Applications, Bad Honnef, Germany, February (2011).

  15. Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Kenji Hiruma, and Takashi Fukui, "III-V Semiconductor Nanowires on Si: Selective Area MOVPE and Their Device Applications.", 2010 MRS fall meeting, MRS, BOSTON, USA , April (2011).

  16. T. Fukui, M. Yoshimura, K. Tomioka: “Semiconductor nanowires and their photovoltaic applications”, JSPS-RSAS Joint Conference on Capturing the Sun, Stockholm, Sweden, May (2011).

  17. T. Fukui, M. Yoshimura, E. Nakai, K. Tomioka: “III-V semiconductor nanowires and their electronics and photonic device applications”, Japan-Sweden QNANO Workshop, Visby, Sweden, June (2011).

  18. J. Motohisa, K. Tomioka, S. Hara, K. Hiruma, T. Fukui: “III-V Semiconductor Nanowire Transistors and Light Emitting Devices”, the 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011), Daejeon, Korea, June (2011).

  19. T. Fukui, M. Yoshimura, E. Nakai, K. Tomioka: “Compound Semiconductor Nanowire Solar Cell”, 9th Topical Workshop on Heterostructure Microelectronics (TWHM-2011), Gifu, Japan, August (2011).

  20. T. Fukui, M. Yoshimura, E. Nakai, K. Tomioka: “III-V Compound Semiconductor Nanowire and their electrical and optical applications”, 7th International Conference on Advanced Materials and Devices, December (2011).

  21. K. Tomioka, J. Motohisa, S. Hara, and T. Fukui, "Fabrication of III-V Nanowire-Based Surrounding-Gate Transistors on Si Substrate ", 220th ECS Meeting, BOSTON, USA, October (2011).

  22. T. Fukui, M. Yoshimura, E. Nakai, K. Tomioka: “Compound Semiconductor Nanowire Solar Cell”, 2012 RCIQE International Workshop for Green Electronics, Sapporo, Japan, March (2012).

  23. T. Fukui, M. Yoshimura, E. Nakai, K. Tomioka: “Compound Semiconductor Nanowire Solar Cell”, The 16th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVI), Busan, Korea, May (2012).

  24. Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Steep-slope Tunnel Field-Effect Transistors using III-V Nanowire/Si Heterojunction", 2012 IEEE Symposia on VLSI Technology and Circuits, Hawaii, USA , June (2012).

  25. T. Fukui, K. Ikejiri, M. Yoshimura, E. Nakai, K. Tomioka: “Compound Semiconductor Nanowire Solar Cell”, The 1st International Conference on Emerging Advanced nanomaterials (ICEAN), Brisbane, Australia, October (2012).

  26. Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Integration of III-V Nanowires on Si and Device Applications", 25th International Microprocesses and Nanotechnology Conference、Kobe, Japan, November  (2012).

  27. T. Fukui, M. Yoshimura, E. Nakai, T. Endo, K. Tomioka: “Compound Semiconductor Nanowire Solar Cell”, 2012 MRS fall meeting, Boston, USA, December (2012).

  28. Katsuhiro Tomioka and Takashi Fukui: “High-performance III-V nanowire transistors on silicon”, The Sweden-Japan Workshop on Quantum Nano-Physics and Electronics (QNANO 2013), Tokyo, January (2013).

  29. Katsuhiro Tomioka, Takashi Fukui, "Integration of III-V nanowires on Si and their applications", The 40th International Symposium on Compound Semiconductors (iscs 2013), Kobe May (2013).

  30. Katsuhiro Tomioka, Takashi Fukui: “III-V nanowire channels on Si: vertical FET applications”, 2013 Silicon Nanoelectronics Workshop, Kyoto, Japan, June 9-10 (2013).

  31. Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka: “III-V Compound Semiconductor Nanowire Solar Cells,”2013 Conference on Lasers and Electro-Optics (CREO:2013), San Jose , USA, June 9-14 (2013).

  32. K. Tomioka and T. Fukui: “III-V Nanowire/Si Heterojunction Tunnel Field-Effect Transistors,” the 32nd Electronic Materials Symposium (EMS-32), Shiga, Japan, July 10-12 (2013).

  33. K. Tomioka and T. Fukui: “InGaAs nanowire FETs on Si and steep subthreshold-slope transistors(Invited)”, 10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013), Hakodate, Japan, Sep.2-5 (2013).

  34. Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka: “Compound Semiconductor Nanowire Solar Cells” JSAP-MRS Joint Symposia, Kyoto, Japan, Sep. 16-20(2013).

  35. Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka: “III-V Compound Semiconductor Nanowire Solar Cells” 12th IUMRS ICAM, Qingdao, China, September 22-28(2013).

  36. Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka: “III-V Compound Semiconductor Nanowire Solar Cells (Invited),” TMU-IAS Focus Workshop, Munich, Germany, October 28-29(2013)

  37. Katsuhiro Tomioka and Takashi Fukui: “Vertical III-V Nanowire-Channel on Si”, 224th ECS meeting, San Francisco, USA, Oct. 27 – Nov.1 (2013).

  38. Katsuhiro Tomioka and Takashi Fukui: “III-V/Si Heterojunctions for Steep Subthreshold-Slope Transistor”, Third Berkeley Symposium on Energy Efficient Electronic Systems, Berkeley, USA, Oct. 28 – 29 (2013).

  39. Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai, and Katsuhiro Tomioka: “III-V Compound Semiconductor Nanowire Solar Cells,” TUM-IAS Focus Workshop on “Advances in Semiconductor Nanowire-based Photonics,” Munich, Germany, Oct. 28-29 (2013).

  40. Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai Fumiya Ishizaka and Katsuhiro Tomioka: “III-V semiconductor nanowires and their photovoltaic device applications,” 12th International Conference on Atomically Controlled Surface, Interface and Nanostructures (ACSIN-12), Tsukuba, Japan, November 4-8(2013).

  41. Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai Fumiya Ishizaka and Katsuhiro Tomioka: “Selective area growth of III-V semiconductor nanowires and their photovoltaic and electron device applications,” Nanowires 2013, Rehovot, Israel, Nov. 12-15(2013).

  42. Katsuhiro Tomioka, Masatoshi Yoshimura, Fumiya Ishizaka, Eiji Nakai, and Takashi Fukui: “Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch” 2013 International Electron Devices Meeting (IEDM 2013), Washington DC, USA, Dec. 9-11 (2013).

  43. Katsuhiro Tomioka and Takashi Fukui: “Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions” 225th ECS meeting, Orlando, USA, May 12th (2014).

  44. Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Takashi Fukui: “Selective-area growth of vertical InAs nanowires on Ge(111)” 17th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVII), Lausanne, Switzerland, July 13-18 (2014).

  45. Katsuhiro Tomioka and Takashi Fukui: “III-V nanowires on patterned Si substrates and their applications” 10th International Workshop on Epitaxial Semiconductor on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2014), Traunkirchen, Austria, July 20-23 (2014).

  46. Katsuhiro Tomioka and Takashi Fukui: “Selective-area growth of III-V nanowires on Si and their applications” 8th Nanowire Growth Workshop/Nanowire 2014, Eindhoven, Netherland, Aug. 25-29 (2014).

  47. T. Fukui, E. Nakai, F. Ishizaka and K. Tomioka, “III-V Semiconductor nanowires and their photovoltaic applications”, 3rd biennial Conference of the Combined Australian Materials Societies, November 26-28(2014)

  48. Takashi Fukui, Eiji Nakai, MuYi Chen and Katsuhiro Tomioka: “III-V Compound Semiconductor Nanowire Solar Cells”, Topical Meetings on Optical Nanostructures and Advanced Materials for Photovoltaics (PV), Canberra , Australia, December 2-5(2014)

  49. Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Muyi Chen, Takashi Fukui: “Selective-Area Growth of III-V Nanowires and Their Devices” MRS fall meeting 2014, Hynes Convention Center, Boston, Nov. 30th – Dec. 5th (2014).

  50. Katsuhiro Tomioka and Takashi Fukui, “III-V nanowire channel and III-V/Si heterojunction for low-power switches", IEEE EUROSOI-ULIS 2015, Aula Prodi Piazza San Gionvanni in Monte, Bologna, Italy, January 26-28 (2015).

  51. K. Tomioka, E. Nakai, F. Ishizaka and T. Fukui, "III-V semiconductor heterostructure nanowires and their photonic applications", WE Heraeus Seminar on III-V Nanowire Photonics, Bad Honnef , Germany, March 22-25(2015).

  52. K. Tomioka, J. Motohisa, T. Fukui, “III-V nanowire channel on Si: From high-performance Vertical FET to steep-slope device”, 2015 International Symposium on VLSI Technology, Systems and Applications (2015 VLSI-TSA), Hsinchu, Taiwan, April 27-29 (2015).

  53. T. Fukui, F. Ishizaka, K. Tomioka, “Vertically Aligned Semiconductor Nanowire Array and Their Applications (Invited)”, Compound Semiconductor Week 2015 (CSW2015), Santa Barbara, USA, June 28 - July 2 (2015).

  54. K. Tomioka, J. Motohisa, T. Fukui, “Heterogeneous integration of vertical III-V nanowires on Si and Ge and their applications.”, The 20th American Conference on Crystal Growth and Epitaxy and The 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (ACCGE-20/OMVPE-17), Big Sky, Montana, USA, 2-7 Aug. (2015).

  55. K. Tomioka and T. Fukui, “Vertical III-V nanowire transistors for future low-power switches”, 12th Sweden - Japan QNANO Workshop, Hindas, Sweden, Sep. 24-25 (2015).

  56. K. Tomioka, J. Motohisa, T. Fukui, “Recent progress in vertical TFET using III-V/Si heterojunction”, Steep Transistors Workshop, Notre Dame, USA, Oct. 5-6 (2015).

  57. K. Tomioka, J. Motohisa, T. Fukui, “Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions”, 228th ECS Meeting, phoenix, Arizona, USA, Oct. 11 - 15 (2015).

  58. Katsuhiro Tomioka, “Vertical transistors using III-V nanowires on Si”, 2015 CNU-HU Joint Workshop, Daejeon, Korea, Nov. 20th (2015).

  59. T. Fukui, F. Ishizaka and K. Tomioka, “Semiconductor nanowire array grown by selective area epitaxy and their applications”, The International Chemical Congress of Pacific Basin Societies 2015, Honolulu Convention Center, Hawaii, USA, December 15-20(2015)

  60. K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui, “Heterogeneous Integration of InGaAs-Related Nanowires on Si and Their Device Applications”, 18th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVIII), San Diego, USA, July 10-15 (2016).

  61. T. Fukui and K. Tomioka, “III-V semiconductor nanowire hetero-epitaxy on Si, Ge, poly-Si and graphene” The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan, August 7 – 12 (2016).

  62. K. Tomioka, J. Motohisa, T. Fukui, “Selective-area growth of III-V nanowires on Si and transistor applications”, The Eighth International Conference on Low Dimensional Structures and Devices (LDSD 2016), Mayan Riviera, Mexico, August 28th – September 2nd (2016).

  63. K. Tomioka, J. Motohisa, T. Fukui,”Advances in Steep-Slope Tunnel FETs”, ESSCIRC-ESSDERC 2016, Lausanne, Switzerland, September 12th – 15th (2016).

  64. K. Tomioka, J. Motohisa, T. Fukui, “Recent progress in vertical Si/III-V tunnel FETs: from fundamentals to current boosting technology” PRiME 2016, Honolulu, USA, October 2nd – 7th (2016).

  65. K. Tomioka, “Selective area growth of III-V nanowires on Si and their transistor applications” 2016 HU-SNU Joint Workshop, ,Sapporo, Japan, November 25th (2016)

  66. Takashi Fukui, Yoshihiro Hiraya, Fumiya Ishizaka, and Katsuhiro Tomioka, “Phase transition from Zinc Blende to Wurtzite and green-yellow emission of AlInP grown by crystal structure transfer method (Invited)”13th Sweden - Japan QNANO Workshop, Tokyo, Japan, March. 23-24 (2017).

  67. K. Tomioka, J. Motohisa, T. Fukui “Vertical III-V nanowires on Si and transistor applications” The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017), Kyoto, Japan, August 27 – September 1 (2017).

  68. K. Tomioka and T. Fukui, “Transistor applications using vertical III-V nanowires on Si platform” 232nd ECS meeting, Washington DC, USA, October 1 – 5 (2017).

  69. Katsuhiro Tomioka, “Integration of III-V nanowires on Si and their transistor applications (Plenary)” 22nd International Conference on Advanced Materials, Rome, Italy, Dec. 10 – 12 (2018).

  70. K. Tomioka, J. Motohisa, “Selective-Area Epitaxy of III-V Nanowires on Si and Their Switching Applications” 7th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano 2019), Kobe, Japan, Sep. 24 – 27 (2019).

  71. K. Tomioka, H. Gamo, J. Motohisa, “(Invited) Vertical Tunnel FET Technologies Using III-V/Si Heterojunction” 236th ECS meeting, Atlanta, USA, Oct. 13 – 17 (2019).

  72. Junichi Motohisa and Katsuhiro Tomioka, "(Invited) InP-based Nanowires Towards On-demand Single Photon Emitters", XXth International Workshop on Physics of Semiconductor Devices (IWPSD 2019), Kolkata, India, December 17-20 (2019).

  73. Katsuhiro Tomioka and Junichi Motohisa, “(Invited) Integration of III-V nanowire LEDs on Si” The 20th International Meeting on Information Display (IMID 2020), Online conference, Korea, August 25 – 28, (2020).

  74. Katsuhiro Tomioka, Hironori Gamo, and Junichi Motohisa, “(Invited) Integration of III-V Nanowire on Si and Their Device Application” International Union of Materials Research Societies - International Conference in Asia 2021 (IUMRS-ICA 2021), On/Offline hybrid event, Jeju, Korea, October 3 – 8, (2021).

  75. Katsuhiro Tomioka and Junichi Motohisa, “(Invited) Integration of III-V Nanowires on Si and Their Device Applications” 14th International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma 2022), Online – Nagoya University, Japan, March 6 – 10 (2022).

  76. Katsuhiro Tomioka, “(Invited) Vertical III-V Nanowire Transistors and Prospects” 17th D2T Symposium, Hybrid – Tokyo University, Japan, September 15 (2022).

一般講演（計131件）

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  1. P. Mohan, K. Tomioka, J. Motohisa, T. Fukui, “Selective-Area MOVPE Fabrication of InP-Based Heterostructure Nanowire Arrays”, 2006 RCIQE International Seminar for 21st Century COE Program: “Quantum Nanoelectronics for Meme-Media-Based Information Technology (IV)”, Sapporo, February (2006).

  2. K. Tomioka, P. Mohan, J. Noborisaka, S. Hara, J. Motohisa, T. Fukui, “Growth of Vertically Aligned InAs Nanowires by Selective-Area MOVPE”, 2006 RCIQE International Seminar for 21st Century COE Program: “Quantum Nanoelectronics for Meme-Media-Based Information Technology (IV)”, Sapporo, February (2006).

  3. K. Tomioka, P. Mohan, J. Noborisaka, S. Hara, J. Motohisa, T. Fukui, “Growth mechanism of high density InAs nanowire arrays on InAs(111)B by selective-area MOVPE”, The 3rd International Symposium on Ubiquitous Knowledge Network Environment, Meme-Media Technology Approach to the R&D of Next-Generation Information Technologies, 21COE Program, Sapporo, March (2006).

  4. K. Tomioka, P. Mohan, J. Noborisaka, S. Hara, J. Motohisa, and T. Fukui: “Controlled Growth of Highly Uniform Individually Addressable InAs Nanowires by Selective-Area Metalorganic Vapor Phase Epitaxy”, 2006 MRS Spring Meeting, San Fransisco, USA, April (2006).

  5. J. Motohisa, P. Mohan, K. Tomioka, and T. Fukui, “Growth and Characterization of InP/InAs/InP Core-multishell Heterostructure Nanowires by Selective-area Metalorganic Vapor Phase Epitaxy”, 2006 MRS Spring Meeting, San Francisco, USA, April (2006).

  6. K. Tomioka, P. Mohan, J. Noborisaka, S. Hara, J. Motohisa and T. Fukui: “Growth of Highly Uniform InAs Nanowire Arrays by Selective-Area MOVPE”, 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan, May (2006).

  7. Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui: “InAs nanowire growth on lattice-mismatched substrates by selective-area MOVPE”, 2007 RCIQE seminar on Advanced Semiconductor Materials and Devices”, Sapporo, February (2007).

  8. L. Yang, J. Motohisa, J. Takeda, K. Tomioka, T. Fukui: “Excitation-power-density-dependent micro-photoluminescence of the hexagonal nanopillars with single InGaAs/GaAs quantum well fabricated by selective-area metal organic vapor phase epitaxy on the GaAs (111)B substrate.”, 2007 RCIQE seminar on Advanced Semiconductor Materials and Devices”, Sapporo, February (2007).

  9. Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui, “Position Controlled Growth of InAs nanowire on III-V(111)B and Si(111) Substrate by Selective-Area MOVPE”, The 4th International Symposium on Ubiquitous Knowledge Network Environment, Meme-Media Technology Approach to the R&D of Next-Generation Information Technologies, 21COE Program, Sapporo, March (2007).

  10. K. Tomioka, J. Takeda, L. Yang, J. Motohisa, S. Hara, and T. Fukui: ”Position-controlled Heteroepitaxial Growth of InAs Nanowires on Lattice-mismatched Substrates by Selective Area Metalorganic Vapor Phase Epitaxy”, 2007 MRS Spring Meeting, San Fransisco, USA, April (2007).

  11. K. Tomioka, J. Motohisa, S. Hara, and T. Fukui: ”Heteroepitaxial growth of InAs nanowires using selective-area MOVPE”, 26th Electron Material Symposium, Kusatsu-shi, Japan, June (2007)

  12. K. Tomioka, J. Motohisa, S. Hara, and T. Fukui: ”Growth of InAs nanowires on Si(111) by selective-area MOVPE”, 9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, Tokyo, Japan, November (2007).

  13. J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui: “(InGa)As nanowire Field Effect Transistors” The 2007 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2007), Waikoloa, Hawaii, December (2007).

  14. K. Tomioka, J. Motohisa, S. Hara, T. Fukui: “Patterned InAs Nanowire Growth on Si(111) Substrate by Selective-Area Metal-Organic Vapor Phase Epitaxy”, 2008 RCIQE seminar on Advanced Semiconductor Materials and Devices”, Sapporo, February (2008).

  15. K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara, T. Fukui: “Position-Controlled Growth of GaAs Nanowires on Si(111) by Selective-Area Metal-Organic Vapor Phase Epitaxy”, 14th International Conference on Metal Organic Vapor Phase Epitaxy, Metz, France, June (2008).

  16. J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui: “Catalyst-free Growth and FET Application of (InGa)As nanowires” The 66th Device Research Conference (DRC2008), Santa Barbara, California, June (2008).

  17. Y. Kobayashi, K. Tomioka, T. Fukui, J. Motohisa: “Composition Controlled InAsP/InP Nanowires Fabricated by Selective-Area Metal Organic Vapor Phase Epitaxy”, 2nd IEEE Nanotechnology Materials and Devices Conference (NMDC), Kyoto, Japan, October (2008).

  18. K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara, T. Fukui: “Vertical III-V Nanowire Groth on Si Substrate by Selective-Area MOVPE”, 2008 MRS fall meeting, Boston, USA, December (2008).

  19. K. Tomioka, Y. Kobayashi, Y. Kitauchi, T. Tanaka, J. Motohisa, S. Hara, T. Fukui: “Growth of Vertically-Aligned III-V Nanowires on Si Substrate by Selective-Area Metal-Organic Vapor Phase Epitaxy”, 2009 RCIQE seminar on Advanced Semiconductor Materials and Devices”, Sapporo, March (2009).

  20. Y. Kobayashi, Y. Kitauchi, K. Tomioka, T. Fukui, J. Motohisa: “InP-based nanowires and Qunatum Dots Grown by Selective-Area Metalorganic Vapor Phase Epitaxy”, Sapporo, March (2009).

  21. K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara, T. Fukui: “Fabrication of Axial Heterstructures in III-V Nanowires Grown by Selective-Area MOVPE with Regrowth Method”, 2009 MRS spring meeting, San Francisco, USA, April (2009).

  22. K. Tomioka, Y. Kobayashi, T. Tanaka, J. Motohisa, S. Hara, T. Fukui: “Growth of p/n-Doped GaAs-AlGaAs Core-Shell Nanowire Array on Si(111) by Selective-Area MOVPE”, 2009 MRS spring meeting, San Francisco, USA, April (2009).

  23. Y. Kitauchi, K. Tomioka, Y. Kobayashi, S. Hara, T. Fukui, J. Motohisa: “Structural Transition on InP nanowires in Selective-Area Metal-Organic Vapor Phase Epitaxy”, the 14th International Conference on Modulated Semiconductor Structures (MSS-14), Kobe, Japan, July (2009).

  24. M. Yoshimura, K. Tomioka, K. Hiruma, S. Hara, J. Motohisa, T. Fukui: “Growth temperature dependence of InGaAs nanowires grown on GaAs(111)B by selective-area metal-organic vapor phase epitaxy”, the 28th Electronic Materials Symposium (EMS-28), Moriyama, Japan, July (2009).

  25. K. Tomioka, T. Tanaka, M. Yoshimura, J. Motohisa, S. Hara, K. Hiruma, T. Fukui: “Growth of vertically-aligned III-V compound semiconductor nanowires by selective-area MOVPE”, the 28th Electronic Materials Symposium (EMS-28), Moriyama, Japan, July (2009).

  26. T. Tanaka, K. Tomioka, J. Motohisa, S. Hara, T. Fukui: “Fabrication of InAs nanowire vertical surrounding-gate field-effect transistor on Si substrates”, 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai, Japan, October (2009).

  27. M. Yoshimura, K. Tomioka, K. Hiruma, S. Hra, J. Motohisa, T. Fukui: “Growth and characterization of InGaAs nanowires formed on GaAs(111)B by selective-area metal-organic vapor phase epitaxy”, 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai, Japan, October (2009).

  28. K. Tomioka, T. Tanaka, J. Motohisa, S. Hara, K. Hiruma, T. Fukui: “GaAs/AlGaAs core-multishell nanowire-based light-emitting diode arrays on Si substrate”, the 22nd International Microprocesses and Nanotechnology Conference (MNC 2009), Sapporo, November (2009).

  29. T. Tanaka, K. Tomioka, J. Motohisa, S. Hara, T. Fukui: “Vertical Surrounding-Gate Field Effect Transistors using InAs Nanowires on Si Substrates”, 2009 MRS fall meeting, Boston, USA, December (2009).

  30. K. Tomioka, T. Tanaka, J. Motohisa, S. Hara. K. Hiruma, T. Fukui: “Fabrication of GaAs/AlGaAs core-multishell nanowire-based light emitting diode array on Si substrate”, 2009 MRS fall meeting, Boston, USA, December (2009).

  31. K. Tomioka, J. Motohisa, S. Hara. K. Hiruma, T. Fukui: “Fabrication of GaAs nanowire-based light emitting diode array on Si substrate”, the 3rd International Conference on One-Dimensional nanomaterials (ICON 2009), Atlanta, USA, December (2009).

  32. M. Yoshioka, K. Tomioka, S. Hara, T. Fukui; “Progress report on knowledge exploratory project for nanodevice design and manufacturing”, the 3rd International Symposium on Global COE Program of Center for Next-Generation Information Technology Based on Knowledge Discovery and Knowledge Federation (GCOE-NGIT), Sapporo, Japan, January (2010).

  33. K. Tomioka, T. Tanaka, Y. Takayama, M. Yoshimura, J. Motohisa, S. Hara, K. Hiruma, T. Fukui: ”Integration of III-V nanowire-based devices on Si”, 2010 International RCIQE/CREST Joint Workshop, Sapporo, Japan, March (2010).

  34. S. Soundeswaran, K. Tomioka, T. Sato, M. Yoshimura, J. Motohisa, K. Hiruma, T. Fukui: “Growth and characterization of core-multishell GaAs nanowire array solar cell”, International conference on nanomaterials, Kottayam, India, April (2010).

  35. M. Yoshimura, K. Tomioka, K. Hiruma, S. Hara, J. Motohisa, T. Fukui; “Heteroepitaxial growth of InGaAs nanowires formed on GaAs(111)B by selective-area MOVPE”, the 15th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XV), Nevada, USA, May (2010).

  36. K. Tomioka, M. Yoshimura, J. Motohisa, S. Hara, K. Hiruma, T. Fukui; “Selective-area growth of InGaAs nanowires on Si substrate”, the 15th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XV), Nevada, USA, May (2010).

  37. K. Tomioka, J. Motohisa, S. Hara, K. Hiruma, T. Fukui: “Fabrication of GaAs/InAs axial nanowires on Si by selective-area MOVPE with re-growth method”, the 22nd International Conference on InP and Related Materials/the 37th International Conference on Compound Semiconductors, Takamatsu, Japan, May (2010).

  38. Y. Kobayashi, J. Motohisa, K. Tomioka, S. Hara, K. Hiruma, T. Fukui: “Selective-Area MOVPE Growth and optical properties of single InAsP Quantum dots embedded in InP Nanowires”, the 22nd International Conference on InP and Related Materials/the 37th  International Conference on Compound Semiconductors, Takamatsu, Japan, May (2010).

  39. Y. Kohashi, T. Sato, K. Tomioka, S. Hara, T. Fukui, and J. Motohisa: “Electrical characterization of InGaAs nanowire MISFETs Fabricated by Dielectric-first Process”, the 29th Electronic Materials Symposium (EMS-29), Izu, Japan, July (2010).

  40. M. Yoshimura, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa, T. Fukui: “Lattice-Mismatched Growth of InGaAs Nanowires Formed on GaAs(111)B Selective-Area MOVPE”, the 29th Electronic Materials Symposium (EMS-29), Izu, Japan, July (2010).

  41. Katsuhiro Tomioka, Junichi Motohisa, Shijiroh Hara, Kenji Hiruma, and Takashi Fukui, "Selective-area growth of InGaAs nanowires on Si substrate", SPIE Optics+Photonics 2010, San Diego, USA (2010/8/2)

  42. Y. Takayama, K. Tomioka, S. Hara, T. Fukui, and J. Motohisa, "Selective-are MOVPE of GaSb on GaAs(111)-oriented Substrates", The 37th International Symposium on Compound Semiconductors (ISCS 2010), Kagawa, Japan (2010/7/4)

  43. K. Tomioka, J. Motohisa, S. Hara, K. Hiruma, T. Tanaka and T. Fukui, "Integration of III-V NW-based Vertical FET on Si and Device Concept for Tunnel FET using III-V/Si Heterojunction", 2010 MRS fall meeting, MRS, Boston, USA, Nov.29th – Dec. 3rd (2010).

  44. K.Tomioka, M. Yoshimura, J. Motohisa, S. Hara, K. Hiruma, and T. Fukui, "Selective-area growth of InGaAs nanowires on Si substrate", 2010 MRS fall meeting, MRS, Boston, USA, Nov.29th – Dec. 3rd (2010).

  45. M. Yoshimura, K. Tomioka, E. Nakai, and T. Fukui: " Fabrication of InP Nanowire Array Solar Cells using Selective-Area Metal-Organic Vapor Phase Epitaxy, " JSPS-RSAS Joint Conference “Capturing the Sun”, Stockholm, Sweden, May 30-31 (2011).

  46. K.Tomioka and T. Fukui, "Tunnel field-effect transistor using InAs nanowire/Si heterojunction", The 15th International Symposium on the Physics of Semiconductors and Applications, Jeju, KOREA, July 5-8 (2011).

  47. Katsuhiro Tomioka, Masatoshi Yoshimura and Takashi Fukui, "Integration of InGaAs Nanowire Vertical Surrounding-Gate Transistors on Si", 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Aichi, Japan, Sep. 28-30 (2011).

  48. S.Maeda, K.Tomioka, S. Hara, and J. Motohisa, "Fabrication and Characterization of InP Nanowire Light Emitting Diodes", 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Aichi, Japan, Sep. 28-30 (2011).

  49. K.Ikejiri, K. Tomioka, S. Imai, and T. Fukui, "Growth of GaAs Nanowires on Poly-Si by Selective-Area MOVPE", 2011 International Conference on Solid State Devices and Materials (SSDM 2011), Aichi, Japan, Sep. 28-30 (2011).

  50. Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui, "Fabrication of Vertical In0.7Ga0.3As Nanowire Surrounding-Gate Transistors with high-k Gate Dielectric on Si Substrate", 24th International Microprocesses and Nanotechnology Conference (MNC2011), Kyoto, Japan, Oct. 24-27 (2011).

  51. E.Nakai, M. Yoshimura, K. Tomioka and T. Fukui, "Fabrication and Optical Property of GaAs Nanowire Array for Solar Cell Applications", 24th International Microprocesses and Nanotechnology Conference (MNC2011), Kyoto, Japan, Oct. 24-27 (2011).

  52. Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Integration of InGaAs/InP/InAlAs CMS nanowire-based surrounding-gate transistors on Si substrate", 2011 MRS Fall Meeting, Boston, Nov. 28-Dec. 2 (2011).

  53. M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui: " Characterization of InP nanowire array solar cells using selective-area metal-organic vapor phase epitaxy, " the 2011 Material Research Society (MRS) Fall Meeting, Boston, Massachusetts, USA, Nov. 28-Dec. 2 (2011).

  54. Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Vertical In0.7Ga0.3As nanowire surrounding-gate transistors with high-k gate dielectric on Si substrate", Electron Devices Meeting (IEDM), 2011 IEEE International, Washington DC, USA Dec. 5-7 (2011).

  55. M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui: " Surface passivation of InP nanowire array solar cells with AlInP layer, " 2012 RCIQE International Workshop for Green Electronics, Sapporo, Japan, March 5-6 (2012)

  56. K. Tomioka, M. Yoshimura, T. Fukui: “III-V nanowire Surrounding-Gate Transistors and Tunnel FETs using InAs/Si Heterojunction”, 2012 RCIQE International Workshop for Green Electronics, Sapporo, Japan, March 5-6 (2012).

  57. Katsuhiro Tomioka, Takashi Fukui, "Realization of Steep-Slope Behavior in Tunnel FETs Using InAs Nanowire/Si Heterojunction", 2012 MRS Spring Meeting, San Francisco, California, USA, Apr. 9-13 (2012).

  58. K. Ikejiri, K. Tomioka, and T. Fukui: “Bi-directional growth of Zn-doped InP nanowires by selective-area MOVPE”, 2012 MRS Spring Meeting, San Francisco, California, USA, Apr. 9-13 (2012).

  59. E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui: “GaAs core-shell nanowire array solar cells on masked GaAs(111)B substrates”, 9th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Eindhoven, Netherlands, May 7-9 (2012).

  60. Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Selective-area growth of GaAs-InGaP core-multishell nanowires on Si substrate toward solar water splitting devices", 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-16), Busan, Korea, May 20-25 (2012)

  61. Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Current Enhancement of Tunnel FET Using InAlAs/InAs Core-Shell Nanowire on p-Si Substrate", 16th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-16), Busan, Korea, May 20-25 (2012)

  62. M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui: “InP/AlInP core-multishell nanowire array solar cells by selective-area MOVPE,” the 31st Electronic Materials Symposium (EMS-31), Shizuoka, Japan, July 11-13 (2012).

  63. M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui: “InP/AlInP core-multishell nanowire array solar cells,” the 39th International Symposium on Compound Semiconductor (ISCS 2012), Santa Barbara, California, USA, Aug. 27-30 (2012).

  64. Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui: "First Demonstration of Tunnel Field-Effect Transistor Using InGaAs/Si Junction", 2012 International Conference on Solid State Devices and Materials（SSDM2012)、Kyoto, Japan, Sep. 25-27 (2012).

  65. F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui: "InGaP nanowire grown by selective-area MOVPE", 2012 International Conference on Solid State Devices and Materials（SSDM2012)、Kyoto, Japan, Sep. 25-27 (2012).

  66. K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui: “Bi-directional growth of InP nanowires by selective-area MOVPE,” the 1st International Conference on Emerging Advanced Nanomaterials (ICEAN), Bribane, Australia, Oct. 22-25 (2012).

  67. Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "First Demonstration of Tunnel Field-Effect Transistor Using InGaAs Nanowire/Si Junction", 2012 MRS Fall Meeting, Boston, USANov. 25-30 (2012).

  68. Katsuhiro Tomioka, Masatoshi Yoshimura, Eiji Nakai, Takashi Fukui, "Selective-area growth of GaAs-InGaP core-multishell nanowires on Si substrate toward a solar water splitting chip", 2012 MRS Fall Meeting, Boston, USA, Nov. 25-30 (2012).

  69. E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui: “GaAs/InGaP core-multishell nanowire array solar cells by selective-area metal organic vapor phase epitaxy,” 2012 MRS Fall Meeting, Boston, Massachusetts, USA, Nov. 25-30 (2012).

  70. Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui, "Highly Conductive InAs Nanowire Vertical Transistors on Si", 2013 MRS Spring Meeting, San Francisco, USA (2013/4/2).

  71. Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui: “Zn-compensating effect of channel of InGaAs nanowire/Si heterojunction tunnel FET and steep-turn on switching property,” the 2013 Europe Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, May 27-31 (2013).

  72. M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui: “ITO/p-InP Hetero-Junction NW-Array Solar Cells,” the 2013 Europe Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, May 27-31 (2013).

  73. Katsuhiro Tomioka and Takashi Fukui: “Gate-first process and EOT-scaling of III-V nanowire-based vertical transistors on Si,” the 71st Device Research Conference (DRC 2013), Notre Dame, USA, June 23-26 (2013).

  74. M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui: “Fabrication of ITO/p-InP hetero-junction nanowire-array solar cells,” the 32nd Electronic Materials Symposium (EMS-32), Shiga, Japan, July 10-12 (2013).

  75. F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui: “Growth of Wurtzite InP/GaP Core-shell Nanowire by Selective-area Metal Organic Vapor Phase Epitaxy,” the 32nd Electronic Materials Symposium (EMS-32), Shiga, Japan, July 10-12 (2013).

  76. E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui: “InGaAs axial junction nanowire array solar cells with AlInP passivation layer,” the 5th International Conference on One-dimensional Nanomaterials (ICON 2013), Annecy, France, Sep. 23-36 (2013).

  77. F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui: “Wurtzite InP/GaP core-shell nanowires toward direct band gap transition,” the 5th International Conference on One-dimensional Nanomaterials (ICON 2013), Annecy, France, Sep. 23-36 (2013).

  78. M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui: “ITO/p-InP Heterojunction NW-Array Solar Cells,” TUM-IAS Focus Workshop on “Advances in Semiconductor Nanowire-based Photonics,” Munich, Germany, Oct. 28-29 (2013).

  79. E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui: “Fabrication and Characterization of InGaAs Axial Junction Nanowire Array Solar Cells,” the 26th International Microprocesses and Nanotechnology Conference (MNC2013), Sapporo, Japan, Nov. 5-8 (2013).

  80. Katsuhiro Tomioka, Masatoshi Yoshimura, Eiji Nakai, and Takashi Fukui: “Demonstration of P-Channel Tunnel FET Using Zn-Doped InAs Nanowire/Si Heterojunction and Doping Effect,” MRS Fall Meeting 2013, Boston, Massachusetts, USA, Dec. 1-6 (2013).

  81. F. Ishizaka, K. Tomioka, and T. Fukui: “Wurtzite InP/AlGaP Core-Shell Nanowires Toward Direct Band Gap Transition,” MRS Spring Meeting 2014, San Fransisco, California, USA, Apr. 21-25 (2014).

  82. K. Tomioka, F. Ishizaka, and T. Fukui: “Selective-area growth of InAs nanowire inside Si(100) and SOI substrates toward tunnel FET applications,” the 17th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-VXII), Lausanne, Switzerland, July 13-18 (2014).

  83. Eiji Nakai, Masatoshi Yoshimura, Katsuhiro Tomioka, Takashi Fukui: “InGaAs axial junction nanowire array solar cells with Sn-doped contact layer,” the 17th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-VXII), Lausanne, Switzerland, July 13-18 (2014).

  84. Fumiya Ishizaka, Yoshihiro Hiraya, Katsuhiro Tomioka, and Takashi Fukui: “Selective-area growth of wurtzite InP/AlGaP core-shell nanowires,” the 17th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-VXII), Lausanne, Switzerland, July 13-18 (2014).

  85. Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Takashi Fukui: “Integration of Vertical InAs Nanowires on Ge(111) by Selective-Area MOVPE”, International Conference on Solid State Devices and Materials (ssdm 2014), Tsukuba, Japan, Sep. 8-11 (2014).

  86. F. Ishizaka, Y. Hiraya, K. Tomioka, T. Fukui “Selective-area growth of wurtzite InP/AlGaP core-shell nanowires toward direct-band-gap green emission” PCSI-42(42nd Conference on the Physics and Chemistry of Surfaces and Interfaces), Snowbird Resort, Utah, USA, January 18-22(2015).

  87. M. Chen, E. Nakai, K. Tomioka, T. Fukui, "Free-standing InP nanowire array and their optical properties toward resource saving solar cells", 2015 MRS Spring Meeting, San Francisco, USA, April 6-10 (2015).

  88. K. Tomioka, F. Ishizaka, E. Nakai, T. Fukui, "Selective-area growth of vertical InAs nanowires on Ge(111)", 2015 MRS Spring Meeting, San Francisco, USA, April 6-10 (2015).

  89. Y. Hiraya, F. Ishizaka, K. Tomioka, T. Fukui, “Growth of AlGaP and AlInP on GaN Substrates Toward Transferring Wurtzite Structure”, Compound Semiconductor Week 2015 (CSW2015), Santa Barbara, USA, June 28 - July 2(2015).

  90. H. Kameda, S. Yanase, K. Tomioka, S. Hara, J. Motohisa, “Photoluminescence Study of Doping-induced Crystal Structure Transition in Indium Phosphide Nanowires”, 17th International Conference on Modulated Semiconductor Structures (MSS 2015), Sendai, Japan, July 26-31 (2015).

  91. K. Tomioka, F. Ishizaka, J. Motohisa and T. Fukui, “Steep-Slope Tunnel FET using InGaAs/InP Core-Shell Nanowire/Si Heterojunction”, 2015 International Conference on Solid State Devices and Materials (SSDM 2015) Sep. 27-30, Sapporo Japan (2015).

  92. F. Ishizaka, Y. Hiraya, K. Tomioka, T. Fukui ,”Growth and Characterization of Wurtzite InP/AlInP Core-Shell Nanowires”, 2015 International Conference on Solid State Devices and Materials (SSDM 2015) Sep. 27-30, Sapporo Japan (2015).

  93. F. Ishizaka, Y. Hiraya, K. Tomioka, T. Fukui, “Structural and Optical Properties of Wurtzite AlInP Grown on Wurtzite InP Nanowires” 2015 MRS Fall Meeting, Boston, USA, Nov. 29 – Dec. 4 (2015).

  94. K. Tomioka, F. Ishizaka, T. Fukui, J. Motohisa, “Steep Turn-On Property of Vertical Tunnel FET Using InGaAs-InP Core-Shell Nanowire/Si Heterojunction” 2015 MRS Fall Meeting, Boston, USA, Nov. 29 – Dec. 4 (2015).

  95. A. Yoshida, K. Tomioka, F. Ishizaka, K. Chiba, J. Motohisa, T. Fukui, “Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor phase epitaxy” The 18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVIII), San Diego, USA, July 10 – 15 (2016).

  96. F. Ishizaka, Y. Hiraya, K. Tomioka, T. Fukui, “Growth of wurtzite AlInP in InP/AlInP core-shell nanowires by crystal structure transfer method” The 18th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XVIII), San Diego, USA, July 10 – 15 (2016).

  97. K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui, “Selective-area growth of InGaAs-based core-multishell nanowires on Si(111) with modulation-doped layer toward tunnel FETs” The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan, August 7 – 12 (2016).

  98. K. Chiba, K. Tomioka, J. Motohisa, F. Ishizaka, A. Yoshida, T. Fukui, “Study on selective-area growth of InGaAs nanowires for optical communication band” The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan, August 7 – 12 (2016).

  99. K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui, “InGaAs/Si heterojunction tunnel FET with modulation-doped channel” 2016 International Conference on Solid State Devices and Materials (SSDM 2016) September 26 – 29 (2016).

  100. T. Fukui, Y. Hiraya, F. Ishizaka, K. Tomioka, “Phase transition from zinc blende to wurtzite and green emission of AlInP grown on (10-10) GaN by crystal structure transfer epitaxy” 2016 International Conference on Solid State Devices and Materials (SSDM 2016) September 26 – 29 (2016).

  101. F. Ishizaka. Y. Hiraya, K. Tomioka, J. Motohisa, T. Fukui, “Structural and optical properties of wurtzite InP/AlInP core-multishell nanowires” 2016 International Conference on Solid State Devices and Materials (SSDM 2016) September 26 – 29 (2016).

  102. A. Yoshida, K. Tomioka, F. Ishizaka, K. Chiba, J. Motohisa, “Selective-area growth of vertical InGaAs nanowires on Ge for transistor applications” PRiME 2016, Honolulu, USA, October 2nd – 7th (2016).

  103. K. Chiba, K. Tomioka, F. Ishizaka, A. Yoshida, J. Motohisa, “Heterogeneous integration of InGaAs nanowires on Si(111) for Si photonics” PRiME 2016, Honolulu, USA, October 2nd – 7th (2016).

  104. A. Yoshida, F. Ishizaka, K. Tomioka, J. Motohisa, “Heterogeneous integration of vertical InxGa1-xAs nanowire on Ge(111) substrates by selective-area MOVPE”, 29th International Microprocesses and Nanotechnology Conference (MNC 2016), Kyoto, Japan, Nov. 8 – 11 (2016).

  105. K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui, “High-performance InGaAs/Si tunnel FETs using core-multishell nanowire-channel” 2016 MRS Fall Meeting & Exhibit, Boston, USA, Nov. 2 – Dec. 2 (2016).

  106. Katsuhiro Tomioka, Junichi Motohisa, Akinobu Yoshida, Kohei Chiba, "Vertical nanowire-LED array using InGaAs/InP coremultishell nanowires with strained-quantum well on Si substrate", Compound Semiconductor Week 2017 (CSW2017), Berlin, Germany, May 14 - 18 (2017).

  107. A. Yoshida, K. Tomioka, K. Chiba, F. Ishizaka, J. Motohisa, "Selective-area growth of InGaAs nanowires with various In composition on Ge(111) substrates" Nanowire Week 2017, Lund, Sweden, May 29 - June 2 (2017).

  108. K. Tomioka, F. Ishizaka, J. Motohisa, “Current enhancement of tunnel FET using modulation-doped nanowire-channels” 22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18), State College, USA, July 31 – August 4 (2017).

  109. H. Kameda, K. Tomioka, F. Ishizaka, M. Sasaki, J. Motohisa, “Improved characteristics of InP-based nanowire light-emitting diodes” 22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18), State College, USA, July 31 – August 4 (2017).

  110. Y. Minami, A. Yoshida, K. Tomioka, J. Motohisa, “Selective-area growth of GaAs nanowires on Ge(111) substrates” 22nd International Conference on Electronic Properties of Two-Dimensional Systems, 18th International Conference on Modulated Semiconductor Structures (EP2DS-22/MSS-18), State College, USA, July 31 – August 4 (2017).

  111. M. Sasaki, H. Kameda, K. Tomioka, J. Motohisa, “Nanowire quantum dots emitting at telecom wavelength” The 24th Congress of the International Commission for Optics (ICO-24), Tokyo, Japan, August 21 – 25 (2017).

  112. A. Yoshida, Y. Minami, K. Tomioka, J. Motohisa “Heterogeneous integration of vertical InGaAs nanowires on Ge (111) substrates by selective-area growth” The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017), Kyoto, Japan, August 27 – September 1 (2017).

  113. K. Chiba, K. Tomioka, A. Yoshida, J. Motohisa “Integration of InGaAs nanowires on Si(111) for optical devices” The 15th International Conference on Advanced Materials (IUMRS-ICAM 2017), Kyoto, Japan, August 27 – September 1 (2017).

  114. A. Yoshida, K. Chiba, Y. Minami, K. Tomioka, J. Motohisa, “Composition control of InGaAs nanowires on Ge(111) substrates by selective-area growth”, 30th International Microprocesses and Nanotechnology Conference (MNC 2017), Jeju, Korea, November 6-9, 2017.

  115. K. Chiba, A.Yoshida, K. Tomioka, J. Motohisa, “Demonstration of InGaAs nanowire array photodiode on Si”, 30th International Microprocesses and Nanotechnology Conference (MNC 2017), Jeju, Korea, November 6-9, 2017.

  116. K. Tomioka, K. Chiba, A. Yoshida, J. Motohisa, “Radial modulation-doped nanowire channel for millivolt switch” MRS fall meeting 2017, Boston, USA, November 26th – December 1st, 2017.

  117. K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa, “Vertical InGaAs nanowire photodiode array on Si” MRS fall meeting 2017, Boston, USA, November 26th – December 1st, 2017.

  118. K. Tomioka, H. Gamou, A. Yoshida, J. Motohisa, “Scaling Effect on Vertical FETs using III-V Nanowire-Channels” Compound Semiconductor Week 2018 (CSW 2018), Boston, USA, May 29 – June 1 (2018).

  119. M. Sasaki, K. Chiba, A. Yoshida, K. Tomioka, J. Motohisa, “Size Control of InP NWs by in situ Thermal Annealing in MOVPE” 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

  120. Y. Minami, A. Yoshida, K. Tomioka, J. Motohisa, “Growth and characterization of GaAs nanowires on Ge(111) substrates by selective-area MOVPE” 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

  121. J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka, “Characterization of Nanowire Light-emitting Diodes Grown by Selective-area MOVPE” 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

  122. A. Yoshida, K. Tomioka, K. Chiba, J. Motohisa, “Heterogeneous integration of InGaAs nanowires with various In compositions on Ge(111) substrates for vertical transistor application” 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

  123. K. Tomioka, A. Yoshida, J. Motohisa, “Shallow and heavy doping of Ge by MOVPE” 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

  124. H. Gamou, K. Tomioka, A. Yoshida, J. Motohisa, “Selective-area growth of pulse-doped InAs related nanowire-channels on Si” 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

  125. K. Tomioka, J. Motohisa, “Characterization of GaAs-InGaP core-multishell nanowires on Si by selective-area MOVPE” 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX), Nara, Japan, June 3 – 8 (2018).

  126. K. Tomioka, A. Yoshida, F. Ishizaka, J. Motohisa, “Vertical GaAs-InGaP core-shell nanowires on Si by selective-area growth” Nanowire Week 2018, Hamilton, Canada, June 11 – 15 (2018).

  127. H. Gamo, K. Tomioka, A. Yoshida, J. Motohisa, “Vertical FETs using pulse-doped InAs nanowires on Si” Nanowire Week 2018, Hamilton, Canada, June 11 – 15 (2018).

  128. J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka, “Study on emission mechanism in InP-based nanowire LEDs” Nanowire Week 2018, Hamilton, Canada, June 11 – 15 (2018).

  129. J. Motohisa, H. Kameda, M. Sasaki, K. Tomioka, “Electroluminescence from InP-based Heterostructure Nanowiress” International Conference on Solid State Devices and Materials (ssdm 2018), Tokyo, Sep. 9 – 13 (2018).

  130. A. Yoshida, K. Tomioka, J. Motohisa, “InGaAs nanowire/Ge heterojunction Esaki tunnel diodes” International Conference on Solid State Devices and Materials (ssdm 2018), Tokyo, Sep. 9 – 13 (2018).

  131. Katsuhiro Tomioka, “Integration of III-V nanowires on Si and their transistor applications (Plenary)” 22nd International Conference on Advanced Materials, Rome, Italy, Dec. 10 – 12 (2018).

国内会議・シンポジウム / Domestic conference & symposium
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​​第１著者のみ掲載：(計24件)

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  1. 冨岡 克広、本久 順一、原 真二郎、比留間 健之、福井 孝志：「MOVPE選択成長法と再成長によるシリコン基板上のGaAs/InAs/GaAsナノワイヤ量子井戸の作製」第71回応用物理学学術講演会、長崎市 (応用物理学会講演奨励賞記念講演）9/14 (2010)

  2. 冨岡 克広、福井 孝志：「シリコン基板上のIII-V族半導体ナノワイヤLED」日本学術振興会 薄膜131委員会、第246回委員会・第252回研究会、東京、10/18 (2010).

  3. 冨岡 克広、福井孝志：「Si基板上のIII-V族ナノワイヤ選択成長と縦型トランジスタ応用」電子デバイス研究会「クラウド時代のユビキタス電子デバイス」熱海、3/7 (2012).

  4. 冨岡 克広、吉村 正利、福井 孝志：「Si/III-V化合物半導体ヘテロ接合界面を用いたトンネルFETの作製」応用物理学会シリコンテクノロジー分科会,東京、8/2 (2012).

  5. 冨岡 克広：「シリコン結晶上のIII-V半導体ナノワイヤーの成長技術とトンネルFET応用について」半導体技術ロードマップ委員会専門部会(WG3),東京、10/3 (2012).

  6. 冨岡 克広、福井 孝志：「III-V族化合物半導体ナノワイヤ成長と応用(特別講演）」第42 回結晶成長国内会議（NCCG-42）、福岡、11/10 (2012).

  7. 冨岡 克広、吉村 正利、中井 栄治、遠藤 隆人、福井 孝志：「III-V族化合物半導体ナノワイヤ選択成長と太陽電池応用（招待講演）」第42 回結晶成長国内会議（NCCG-42）、福岡 、11/10 (2012).

  8. 冨岡 克広：「Si/III-Vヘテロ接合型トンネルFETとトンネルFETの研究動向」半導体技術ロードマップ委員会専門部会(WG3)、東京、2/14 (2013)

  9. 冨岡 克広、福井 孝志：「半導体ナノワイヤデバイスの新展開」半導体ミニバンド研究会キックオフミーティング、宮崎、3/18 (2013).

  10. 冨岡 克広：「III-V/Siヘテロ接合界面ナノワイヤトンネルFET」第32回電子材料シンポジウム、滋賀、July 11 (2013).

  11. 冨岡 克広、福井 孝志：「Si上のIII-V族化合物半導体ナノワイヤチャネル：縦型トランジスタ応用」平成25年電気学会　電子・情報・システム部門大会、北見、9/6 (2013)

  12. 冨岡 克広、福井 孝志：「Si上III-V族半導体ナノワイヤの集積：高性能縦型FETと低電圧トランジスタ応用」応用物理学会シリコンテクノロジー分科会第167回研究集会、1/29 (2014).

  13. 冨岡 克広、福井 孝志：「III-Vナノワイヤ/Siヘテロ接合界面の電子素子応用と光電変換素子応用」応用物理学会シリコンテクノロジー分科会第173回研究集会, 名古屋市、6/27 (2014).

  14. 冨岡 克広、石坂 文哉、中井 栄治、福井 孝志：「III-V族化合物半導体ナノワイヤ選択成長と電子素子応用」2014年電気化学秋季大会, 札幌市 、9/27 (2014)

  15. 冨岡 克広、本久 順一、福井 孝志：「III-Vナノワイヤ/Siヘテロ接合界面のトンネルFET応用」電子情報通信学会2015年総合大会、滋賀、3/10 (2015).

  16. 冨岡 克広、本久 順一、福井 孝志：「半導体ナノワイヤ異種集積技術とデバイス応用」2015年電子情報通信学会　ソサイエティ大会、仙台、9月8 (2015).

  17. 冨岡 克広、本久 順一、福井 孝志：「【展望講演】化合物半導体ナノワイヤのヘテロエピタキシャル成長と展望」第47回秋季化学工学会、札幌、9/11 (2015).

  18. 冨岡 克広：「次世代低消費電力スイッチ素子の創成へ向けた化合物半導体ナノワイヤの研究」2015年度 エヌエフ基金　研究開発奨励賞　発表会、東京、11/13 (2015)

  19. ​​冨岡 克広、本久 順一：「半導体ナノワイヤ選択成長と電子デバイス応用」第9回ナノ構造エピタキシャル成長講演会、札幌、7/14 (2017).

  20. 冨岡 克広、本久 順一：「MOVPE選択成長法によるナノワイヤ成長とデバイス応用」第78回応用物理学秋季学術講演会、福岡、9/8 (2017).

  21. 冨岡 克広、「III-V化合物半導体ナノワイヤチャネルの電子素子応用」第24回 半導体におけるスピン工学の基礎と応用(PASPS-24)、仙台、2019年12月18日

  22. 冨岡 克広、「ナノワイヤ異種集積技術と光電子デバイス応用」大阪大学CRSN 第2回異分野研究交流会「半導体・ナノカーボン系」、オンライン、2020年8月28日

  23. 冨岡 克広、蒲生 浩憲、本久 順一、福井 孝志「（招待講演） InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製」2020年度電子情報通信学会 シリコン材料・デバイス研究会、オンライン、2021年1月28日

  24. 冨岡 克広、蒲生 浩憲、本久 順一「（招待講演） 縦型トンネルトランジスタの高性能化」第85回半導体・集積回路技術シンポジウム、オンライン、2021年8月30日

  25. ​冨岡 克広「（招待講演）Heterogeneous integration of III-V nanowires on Si and their applications」ナノ学会合同部会シンポジウム、小倉、2023年11月21日

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