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​査読付き論文 / Publications
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  1. K. Tomioka and S. Adachi: “Spectroscopic characterization of GaP surfaces treated in HCl solution”, J. Electrochem. Soc., Vol. 152, pp. G173-G178 (2005). 

  2. S. Adachi and K. Tomioka: “Visible light emission from porous silicon prepared by photoetching in alkaline solution”, Electrochem. Solid-St. Lett., Vol. 8, pp. G251-G253 (2005). 

  3. K. Tomioka and S. Adachi: “Structural and photoluminescence properties of porous GaP formed by electrochemical etching”, J. Appl. Phys., Vol. 98, pp. 073511-073517 (2005). 

  4. K. Tomioka and S. Adachi: “Strong and stable ultraviolet emission from porous silicon prepared by photoetching in KF solution”, App. Phys. Lett., Vol. 87, pp. 251920-1~3 (2005) 

  5. K. Uchida, K. Tomioka, and S. Adachi: “Ultraviolet emission from porous silicon photosynthesized in aqueous alkali fluoride solutions”, J. Appl. Phys., Vol. 100, pp. 014301-1~5 (2006)

  6. L. Yang, J. Motohisa, J. Takeda, K. Tomioka, and T. Fukui: “Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs/GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy”, Appl. Phys. Lett., Vol. 89, pp. 203110-1~3 (2006). 

  7. K. Tomioka, P. Mohan, J. Noborisaka, S. Hara, J. Motohisa, and T. Fukui: “Growth of Highly Uniform InAs Nanowire Array by Selective-Area MOVPE”, J. Cryst. Growth, Vol. 298, pp. 644-647 (2007). 

  8. L. Yang, J. Motohisa, J. Takeda, K. Tomioka, and T. Fukui: “Selective-area growth of hexagonal nanopillars with single InGaAs/GaAs quantum, wells on GaAs(111)B substrate and their temperature-dependent photoluminescence”, Nanotechnology, Vol. 18, pp. 105302-1~5 (2007). 

  9. J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, and T. Fukui: “Electrical Characterizations of InGaAs Nanowire-Top-Gate Field-Effect Transistors by Selective-Area Metal Organic Vapor Phase Epitaxy”, Jpn. J. Appl. Phys., Vol. 46, pp. 7562-7568 (2007). 

  10. K. Tomioka, J. Motohisa, S. Hara, and T. Fukui: “Crystallographic Structure of InAs Nanowires Studied by Transmission Electron Microscopy”, Jpn. J. Appl. Phys., Vol. 46, pp. L1102-L1104 (2007). 

  11. L. Yang, J. Motohisa, K. Tomioka, J. Takeda, T. Fukui, M-M Geng, L-X. Jia, L. Zhang, and Y-L. Liu: “Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well”, Nanotechnology, Vol. 19, pp. 275304-275311 (2008). 

  12. K. Tomioka, J. Motohisa, S. Hara, T. Fukui: “Control of InAs Nanowire Growth Directions on Si”, Nano Letters, Vol. 8, pp. 3475-3480 (2008). 

  13. H. Goto, K. Nosaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa, T. Fukui: “Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy”, Appl. Phys. Exp., Vol. 2, pp.035004-035006 (2009).

  14. K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara, T. Fukui: “Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate”, Nanotechnology,　Vol. 20, pp.145302-145309 (2009).

  15. M. Yoshimura, K. Tomioka, K. Hiruma, S. Hara, J. Motohisa, and T. Fukui: “Growth and Characterization of InGaAs Nanowires Formed on GaAs (111)B by Selective-Area Metal Organic Vapor Phase Epitaxy”, Jpn. J. Appl. Phys., Vol. 49, pp. 04DH08-1 ~ 4 (2010). 

  16. T. Tanaka, K. Tomioka, S. Hara, J. Motohisa, E. Sano, T. Fukui: “Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrate”, Appl. Phys. Exp., Vol. 3, pp.025003-1 ~ 3 (2010). 

  17. Y. Kitauchi, Y. Kobayashi, K. Tomioka, S. Hara, K. Hiruma, T. Fukui, and J. Motohisa: “Structural Transition in Indium Phosphide Nanowires”, Nano Letters, Vol. 10, pp. 1699-1703 (2010). 

  18. K. Tomioka, J. Motohisa, S. Hara, K. Hiruma, T. Fukui: “AlGaAs/GaAs core-mutishell nanowire based light-emitting diode on Si substrate”, Nano Letters, Vol. 10, pp. 1639-1644 (2010). 

  19. S. N. Dorenbos, H. Sasakura, MP. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, CM. Natarajan, RH. Hadfield, T. Zijlstra, TM. Klapwijk, V. Zwiller, I. Suemune: “Position controlled nanowires for infrared single photon emission”, Appl. Phys. Lett., Vol. 97, pp. 171106-1~3 (2010). 

  20. M. Yoshimura, K. Tomioka, K. Hiruma, S. Hara, J. Motohisa, and T. Fukui: “Lattice-mismatched InGaAs nanowires formed on GaAs (111)B by selective-area MOVPE”, J. Cryst. Growth, Vol. 315, No. 1, pp. 148-151 (2010). 

  21. K. Tomioka and T. Fukui: “Tunnel field-effect transistor using InAs nanowire/Si heterojunction”, Appl. Phys. Lett., Vol. 98, pp.083114-1 ~ 3 (2011). 

  22. K. Tomioka, T. Tanaka, S. Hara, K. Hiruma, T. Fukui: “III-V Nanowires on Si Substrate: Selective-Area Growth and Device Applications”, IEEE J. Selec. Topic Quant. Elec., Vol. 17, No. 4, pp.1112-1129 (2011). 

  23. K. Tomioka, K. Ikejiri, T. Tanaka, J. Motohisa, S. Hara, K. Hiruma and T. Fukui: “Selective-area growth of III-V nanowires and their applications”, J. Mat. Res., Vol. 26, No. 7, pp.2127-2141 (2011). 

  24. K. Ikejiri, Y. Kitauchi, K. Tomioka, J. Motohisa, T. Fukui: “Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires”, Nano Letters, Vol. 11, pp. 4314-4318 (2011).

  25. K. Tomioka, T. Tanaka, and T. Fukui: “Growth of InAs/InAlAs Core-Shell Nanowires on Si and Transistor Application”, ECS Transaction., Vol. 41, No. 3, pp.61-69 (2011)

  26. K. Tomioka, M. Yoshimura, T. Fukui: “Vertical InGaAs Nanowire Surrounding-Gate Transistors with High-k Gate Dielectrics on Si Substrate”, IEEE IEDM Tech. Dig. pp.773-776 (2011)

  27. Satoshi Maeda, Katsuhiro Tomioka, Shijiroh Hara, Junichi Motohisa: “Fabrication and Characterization of InP Nanowire Light-Emitting Diodes”, Jpn. J. Appl. Phys. Vol. 51, No. 2, pp.02BN03 (2012)

  28. Y. Kohashi, T. Sato, K. Ikejiri, K. Tomioka, S. Hara, J. Motohisa: “Influence of growth temperature on growth of InGaAs nanowires in selective-area metal-organic vapor-phase epitaxy”, J. Crystal Growth Vol. 338, No. 1, pp. 47 – 51 (2012) 

  29. H. Sasakura, C. Hermannstadter, SN. Dorenbos, N. Akopian, MP. Van Kouwen, J. Motohisa, Y. Kobayashi, H. Kumano, K. Kondo, K. Tomioka, T. Fukui, I. Suemune, and V. Zwiller: “Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum for embedded inside a standing InP nanowire using photoluminescence spectroscopy”, Phys. Rev. B, Vol. 85, pp. 075324-1 ~ 7 (2012). 

  30. T. Fukui, M. Yoshimura, E. Nakai, K. Tomioka: “Position-Controlled III-V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal-Organic Vapor Phase Epitaxy”, AMBIO, Vol. 41, pp. 119-124 (2012)

  31. H. Sakuma, M. Tomoda, PH. Otsuka, O. Matsuda, OB. Wright, T. Fukui, K. Tomioka, IA. Veres: “Vibrational modes of GaAs hexagonal nanopillar arrays studied with ultrashort optical pulses”, Appl. Phys. Lett., Vol. 100, No. 13, pp. 131902-1~3 (2012). 

  32. K. Tomioka, M. Yoshimura, T. Fukui: “Steep-slope Tunnel Field-Effect Transistors using III-V Nanowire/Si Heterojunctions”, IEEE VLSI symposia Tech. Dig. pp.47-48 (2011)

  33. K. Tomioka, M. Yoshimura, T. Fukui: “A III-V nanowire channel on silicon for high-performance vertical transistors”, Nature, Vol. 488, No. 7410, pp. 189 – 192 (2012).

  34. K. Ikejiri, F. Ishizaka, K. Tomioka, T. Fukui: “Bidirectional Growth of Indium Phosphide Nanowires”, Nano Letters, Vol. 12, No. 9, pp. 4770 – 4774 (2012).

  35. K. Ikejiri, F. Ishizaka, K. Tomioka, T. Fukui: “GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE”, Nanotechnology, Vol. 24, No. 11, pp.115304 (2013). 

  36. F. Ishizaka, K. Ikejiri, K. Tomioka, T. Fukui: “Indium-Rich InGaP Nanowires Formed on InP (111)A Substrates by Selective-Area Metal Organic Vapor Phase Epitaxy” Jpn. J. Appl. Phys., Vol. 52, Vo. 4, pp. UNSP 04CH05 (2013). 

  37. M. Yoshimura, E. Nakai, K. Tomioka, T. Fukui: “Indium Phosphide Core-Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer” Appl. Phys. Exp., Vol. 6, pp.052301-1 ~ 3 (2013).

  38. E. Nakai, M. Yoshimura, K. Tomioka, T. Fukui: “GaAs/InGaP Core-Multishell Nanowire-Array-Based Solar Cells”, Jpn. J. Appl. Phys. Vol. 52, No. 5, pp. UNSP 055002 (2013) 

  39. K. Tomioka, T. Fukui: “Gate-first process and EOT-scaling of III-V nanowire-based vertical transistors on Si” IEEE DRC Tech. Dig. pp. 15 – 16 (2013)

  40. K. Tomioka, T. Fukui: “Vertical III-V Nanowire-Channel on Si” ECS Trans. Vol. 58, No. 7,  pp. 99 – 114 (2013)

  41. K. Tomioka, T. Fukui: “III-V/Si heterojunctions for steep subthreshold-slope transistor” IEEE Third Berkeley Symp. E3S Tech. Dig. pp.1 – 2 (2013)

  42. K. Tomioka, M. Yoshimura, T. Fukui: “Sub 60 mV/decade Switch Using an InAs Nanowire-Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique” Nano Letters Vol. 13, No. 12, pp.5822-5826 (2013). 

  43. M. Yoshimura, E. Nakai, K. Tomioka, T. Fukui: “Indium tin oxide and indium phosphide heterojunction nanowire array solar cells”, Appl. Phys. Lett., Vol. 103, No. 24, pp. 243111-1~3 (2012). (I.F. = 3.302, T.C. = 7)

  44. K. Tomioka, M. Yoshimura, F. Ishizaka, E. Nakai, T. Fukui: “Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch” IEEE IEDM Tech. Dig. pp. 88 – 91 (2013)

  45. K. Tomioka, T. Fukui: “Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length”, Appl. Phys. Lett., Vol. 104, pp. 073507-1~4 (2014). 

  46. K. Tomioka and Takashi Fukui: “Recent progress in integration of III-V nanowire transistors on Si substrate by selective-area growth”, J. Phys. D, Vol. 47, pp. 394001-1~13 (2014).

  47. Katsuhiro Tomioka, Takashi Fukui: “Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions”, ECS Transaction Vol 61, 81 (2014).

  48. E. Nakai, M. Chen, M. Yoshimura, K. Tomioka, T. Fukui: “InGaAs axial-junction nanowire-array solar cells” Jpn. J. Appl. Phys. Vol. 54, pp. 015201 1~3 (2015). 

  49. M. Chen, E. Nakai, K. Tomioka, T. Fukui: “Application of free-standing InP nanowire arrays and their optical properties for resource-saving solar cells” Appl. Phys. Exp. Vol. 8, pp. 012301 1~3 (2015).

  50. F. Ishizaka, Y. Hiraya, K. Tomioka, T. Fukui: “Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE” J. Cryst. Growth, Vol. 411, pp. 71 – 75 (2015). 

  51. K. Tomioka, J. Motohisa, T. Fukui, “Surrounding-Gate Tunnel FET Using InAs/Si Heterojunction”, ECS Trans. Vol. 69, pp. 109 – 118 (2015).

  52. K. Tomioka, F. Ishizaka, T. Fukui, “Selective-area growth of InAs nanowires on Ge and vertical transistor application”, Nano Letters, Vol. 15, pp. 7253 – 7257 (2015).

  53. Katsuhiro Tomioka, “Condensed-matter Physics: Flat transistor defies limit” Nature, vol. 526, pp. 51 – 52 (2015).

  54. Y. Hiraya, F. Ishizaka, K. Tomioka, T. Fukui, “Crystal phase transition to free emission wurtzte AlInP by crystal structure transfer”, Appl. Phys. Exp., Vol. 9, pp. 035502-1 – 4 (2016). 

  55. A. Yoshida, K. Tomioka, F. Ishizaka, K. Chiba, J. Motohisa, “Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications” ECS Trans., Vol. 75, pp. 265 – 270 (2016).

  56. Katsuhiro Tomioka, Junichi Motohisa, Takashi Fukui, “(Invited) Recent progress in vertical Si/III-V tunnel FETs: From fundamental to current-boosting technology” ECS Trans., Vol. 75, pp. 127 – 134 (2016).

  57. Katsuhiro Tomioka, Junichi Motohisa, Takashi Fukui, “(Invited) Advances in steep-slope tunnel FETs” Proc. IEEE ESSDERC, pp. 397 – 402 (2016).

  58. Fumiya Ishizaka, Yoshihiro Hiraya, Katsuhiro Tomioka, Junichi Motohisa, Takashi Fukui, "Growth and characterization of wurtzite InP/AlGaP core–multishell nanowires with AlGaP quantum well structures" Jpn. J. Appl. Phys. Vol. 56, pp. 010311 (2017).

  59. A. Yoshida, K. Tomioka, F. Ishizaka, J. Motohisa, “Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor phase epitaxy” J. Cryst. Growth, Vol. 464, pp. 75 - 79 (2017)

  60. Fumiya Ishizaka, Yoshihiro Hiraya, Katsuhiro Tomioka, Junithic Motohisa and Takashi Fukui, "Growth of All-Wurtzite InP/AlInP Core–Multishell Nanowire Array" Nano Lett.,Vol. 17, pp. 1350 - 1355 (2017)

  61. Katsuhiro Tomioka and Takashi Fukui, “(Invited) Transistor application using vertical III-V nanowires on Si platform” ECS Trans., Vol. 80, pp. 43 – 52 (2017).

  62. Kohei Chiba, Katsuhiro Tomioka, Akinobu Yoshida, and Junichi Motohisa, “Composition controllability of InGaAs nanowire arrays in selective area growth with controlled pitched on Si platform” AIP Advances, Vol. 7, pp. 125304 – 1~5 (2017)

  63. Hironori Gamo, Katsuhiro Tomioka, "Selective-area growth of pulsed-doped InAs nanowires on Si and vertical transistor application" J. Cryst. Growth, Vol. 500, pp. 58 - 62 (2018)

  64. Yusuke Minami, Akinobu Yoshida, Junichi Motohisa, Katsuhiro Tomioka, "Growth and characterization of GaAs nanowires on Ge(111) substrates by selective-area MOVPE" J. Cryst. Growth, Vol. 506, pp. 135 - 139 (2018)

  65. J. Motohisa, H. Kameda, M. Sasaki, and K. Tomioka, "Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy" Nanotechnology, Vol. 30, pp. 134002 - 1~9 (2019)

  66. K. Chiba, A. Yoshida, K. Tomioka, and J. Motohisa, "Vertical InGaAs Nanowire Array Photodiodes on Si" ACS Photonics, Vol. 6, pp. 260 - 264 (2019)

  67. K. Tomioka, H. Gamo, J. Motohisa, "Vertical Tunnel FET Technologies using III-V/Si heterojunciton" ECS Trans., Vol. 92 , pp. 71-78 (2019).

  68. H. Gamo, K. Tomioka, "Integration of Indium Arsenide/Indium Phosphide Core-Shell Nanowire Vertical Gate-All-Around Field-Effect Transistors on Si" IEEE Elec. Dev. Lett., Vol. 41(8), pp. 1169 - 1172 (2020)

  69. Katsuhiro Tomioka, Junichi Motohisa, Takashi Fukui,"Rational synthesis of atomically thin quantum structures in nanowires based on nucleation processes" Scientific Reports, Vol. 10, pp. 10720-1~9 (2020)

  70. Tomoya Akamatsu, Katsuhiro Tomioka, Junichi Motohisa,"Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs" Nanotechnology, Vol. 31, pp. 394003 - 1~7 (2020)

  71. Katsuhiro Tomioka, Fumiya Ishizaka, Junichi Motohisa, Takashi Fukui, "InGaAs-InP core–shell nanowire/Si junction for vertical tunnel field-effect transistor" Appl. Phys. Lett., Vol. 117, pp. 123501 - 1~5 (2020).

  72. Yoshiki Tai, Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka, "Selective-area growth of AlInAs nanowires" ECS Transactions, Vol. 98(6), pp. 149 - 153 (2020).

  73. Katsuhiro Tomioka, Hironori Gamo, Junichi Motohisa, Takashi Fukui, "Vertical gate-all-around tunnel FET using InGaAs nanowire/Si with core-multishell structure" IEEE IEDM Tech. Dig. pp. 429 - 432 (2020).

  74. Katsuhiro Tomioka and Junichi Motohisa: “Scaling effect on vertical gate-all-around FETs using III-V NW-channels on Si” IEEE SNW 2021 Tech. Dig. pp. 51 – 52 (2021).

  75. Katsuhiro Tomioka: “A logical switch to the vertical direction” Compound Semiconductor, Vol. 27(5), pp. 40 – 45 (2021).

  76. Akinobu Yoshida, Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka: "Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium" Scientific Reports, Vol. 12, pp. 1606 (2022).

  77. Shun Kimura, Hironori Gamo, Yu Katsumi, Junichi Motohisa and Katsuhiro Tomioka: "InP nanowire light-emitting diodes with different pn-junction structures" Nanotechnology, Vol. 33 (30), pp. 305204 (2022).

  78. Yuki Azuma, Shun Kimura, Hironori Gamo, Junichi Motohisa, Katsuhiro Tomioka: "Current injection and luminescence properties of wurtzite InP nanowires with crystal phase transition" Jpn. J. Appl. Phys. Vol. 62, pp. SC2011 - 1~4 (2023).

  79. Katsuhiro Tomioka, Kazuharu Sugita, Junichi Motohisa: "Enhanced Light Extraction of Nano‐Light‐Emitting Diodes with Metal‐Clad Structure Using Vertical GaAs/GaAsP Core–Multishell Nanowires on Si Platform" Adv. Photon. Res. 2200337-1 - 7(2023).

  80. Hironori Gamo, Chen Lian, Junichi Motohisa, Katsuhiro Tomioka: "Selective-Area Growth of Vertical InGaAs/GaSb Core-Shell Nanowires on Silicon and Dual Switching Properties" ACS Nano, Vol. 18 (18), pp. 18346 – 18351 (2023).

  81. Suman Mukherjee, Katsuhiro Tomioka, Junichi Motohisa: “Polarization Dependence of Excitonic Emission from As-rich Single InAsxP1-x Quantum Dot Embedded in Free-standing InP Nanowire” Nano World J., Vol. 9(S5), pp. S202 – S205 (2023).

  82. Masahiro Sasaki, Tomoya Akamatsu, Katsuhiro Tomioka, Junichi Motohisa: “Size control of InP nanowires by in-situ annealing and its application to the formation of InAsP quantum dots” Nanotechnology, Vol. 35, 195604-1 – 8 (2024).

  83. Junichi Motohisa, Tomoya Akamatsu, Manami Okamoto, Katsuhiro Tomioka: “Characterization of nanowire light-emitting diodes with InP/InAsP heterostructures emitting in telecom band” Jpn. J. Appl. Phys., Vol. 63, 03SP08-1 – 6 (2024).

​総説・解説 / 
​

  1. 冨岡 克広、佐藤 拓也、本久 順一、原 真二郎、福井 孝志、「MOCVD選択成長法による化合物半導体ナノワイヤの形成」（研究紹介）、表面科学 第29巻12号、pp. 726-730 (2008).

  2. 比留間 健之、池尻 圭太郎、吉田 浩惇、冨岡 克広、本久 順一、原 真二郎、福井 孝志、「III-V族化合物半導体ナノワイヤにおける閃亜鉛鉱構造とウルツ鉱構造の構造相転移(解説)」、日本結晶成長学会誌 第34巻4号、pp. 224-232 (2008).

  3. 冨岡 克広、福井 孝志、「シリコン基板を用いた新構造発光素子」、月刊ディスプレイ 第7巻、pp. 39-46 (2010).

  4. 冨岡 克広、福井 孝志、「半導体ナノワイヤデバイスの新展開」（研究紹介）、応用物理 第81巻1号、pp. 59-64 (2012).

  5. 冨岡 克広、福井 孝志：「Si基板上のIII-V族ナノワイヤ選択成長と縦型トランジスタ応用」電気学会研究会資料, Vol. EDD, 電子デバイス研究会 2012, No. 30, pp. 45 – 50 (2012).

  6. 冨岡 克広、福井 孝志: “半導体ナノワイヤデバイスの新展開-縦型トランジスタ応用-” 電子情報通信学会論文誌C, Vol. J96-C (9), pp. 221-230 (2013).

  7. 福井 孝志、吉村 正利、中井 栄治、冨岡 克広:「III-V族化合物半導体ナノワイヤ太陽電池(解説)」日本結晶成長学会誌、41巻2号、pp. 29 – 34 (2014).

  8. 冨岡 克広、福井 孝志：「（招待論文）Si上III-V族化合物半導体ナノワイヤの集積：高性能縦型FETと低電圧トランジスタ応用」信学技報, Vol. 113 (420), pp. 17 – 22 (2014).

  9. 冨岡 克広、福井 孝志：「（招待論文）III-Vナノワイヤ/Siヘテロ接合界面の電子素子応用と光電変換素子応用」信学技報, Vol. 114 (88), pp. 59 – 63 (2014).

  10. 冨岡 克広、本久 順一、福井 孝志：「（招待論文）III-Vナノワイヤ/Siヘテロ接合界面のトンネルFET応用」電子情報通信学会ソサイエティ大会論文集, エレクトロニクス(2), pp. SS-94 – SS-95 (2015).

  11. 冨岡 克広、吉村 正利、本久 順一、福井 孝志：「（招待論文）半導体ナノワイヤ異種集積技術とデバイス応用」電子情報通信学会ソサイエティ大会論文集, エレクトロニクス(2), pp. SS-34 – SS-35 (2015)

  12. 冨岡克広 (藤野正美訳)、「限界を超えたトランジスター」ネイチャー・ダイジェスト、1月号、pp36 – 37 (2016).

  13. 赤松 知弥、亀田 滉貴、佐々木 正尋、冨岡 克広、本久 順一：「InP/InAsP/InPヘテロ構造ナノワイヤLEDの作製と評価」 信学技報, Vol. 118, No. 399, LQE2018-196, pp. 247 – 250 (2019).

  14. 冨岡克広「III-V族化合物半導体ナノワイヤトランジスタ集積技術」（解説記事）、応用物理 第88巻4号、pp. 245-251 (2019).

  15. 冨岡 克広、蒲生 浩憲、本久 順一、福井 孝志：「（招待論文） InGaAsコアマルチシェルナノワイヤ/Si接合による垂直ゲートオールアラウンドトンネルFETの作製」信学技報, Vol. 120, No. 352, SDM2020-52, pp. 13 – 16 (2021).

​著書 / Book
​

  1. Advances in III-V Semiconductor Nanowires and Nanodevices, edited by J. Li, D. Wang, and R. R. LaPierre Junichi Motohisa, Katsuhiro Tomioka, Bin Hua, Kumar S. K. Varadwaj, Shinjiroh Hara, Kenji Hiruma and Takashi Fukui (担当:分担執筆, 範囲:III-V Semiconductor Nanowire Light Emitting Diodes and Lasers) Bentham Science Publisher   2011年11月   

  2. Semiconductor Nanowire and Their Optical Applications Katsuhiro Tomioka and Takashi Fukui (担当:分担執筆, 範囲:Chapter 3: III-V Semiconductor Nanowires on Si by Selective-Area Metal-Organic Vapor Phase Epitaxy.) Springer   2012年1月   ISBN:3642224792

  3. ナノワイヤ最新技術の基礎と応用展開 冨岡克広 (担当:分担執筆, 範囲:第III編第3章 - ナノワイヤのトランジスタ応用) 株式会社シーエムシー出版   2013年3月   ISBN:978-4-7813-0760-2

  4. Handbook of Crystal Growth, Second Edition edited by T. Nishinaga, P. Rudolph, and T. Kuech Tomioka K, Fukui T. “Growth of Semiconductor Nanocrystals “Handbook of Crystal Growth, Vol. I. Nishinaga T, editor. Elsevier, 2015. p. 749–93. ISBN: 9780444563699

  5. Novel Compound Semiconductor Nanowires – Materials, Devices, and Applications. Tomioka K, Fukui T. “Chapter 14 – III-V Nanowires: Transistor and photovoltaic applications” Pan Stanford, 2017. p. 464 – 516. ISBN: 9814745766

  6. Emerging Devices for Low-Power and High-Performance Nanosystems - Physics, Novel Functions, and Data Processing. edited by Simon Dleonibus. Katsuhiro Tomioka "Chapter 2 - Several Challenges in Steep-Slope Tunnel Field-Effect Transistors" Pan Stanford, 2018. p. 73 - 102. ISBN:9789814800112

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